Modern consumer products encounter the challenge of higher diversification but lower volume of units. Embedded non-volatile memories can satisfy this trend since they can be used in different applications by updating firmware. For high endurance applications such as smartcard, SIM card or MCU, eE2PROM or eFlash is ideal. Middle to low range endurance or density applications such as power management ICs can adopt eMTP. Those requiring one time programmable applications can adopt eOTP or eFuse.
USJC offers eFlash, eOTP, and eFuse.

USJC technologies specialty area chart

Below is a table of device offerings for USJC's eNVMs.

Vt options

Platform offering CU250F C55LP C40LP
Technology node 55㎚ 55㎚ 40㎚
Core Vcc (V) 1.2 1.2 1.1
uLVT - V V
LVT - V V
RVT V V V
HVT V V V
uHVT V - -

1.8V IO

Platform offering CU250F C55LP C40LP
Technology node 55㎚ 55㎚ 40㎚
Core Vcc (V) 1.2 1.2 1.1
1.8V - - -
1.8 UD 1.5V - - -
1.8 UD 1.2V - - -

2.5V IO

Platform offering CU250F C55LP C40LP
Technology node 55㎚ 55㎚ 40㎚
Core Vcc (V) 1.2 1.2 1.1
2.5V - V V
2.5 UD 1.8V - V V
2.5 OD 3.3V - V V

3.3V/5V IO

Platform offering CU250F C55LP C40LP
Technology node 55㎚ 55㎚ 40㎚
Core Vcc (V) 1.2 1.2 1.1
3.3V V - -
5V V - -

SRAM

Platform offering CU250F C55LP C40LP
Technology node 55㎚ 55㎚ 40㎚
Core Vcc (V) 1.2 1.2 1.1
6T 0.522 um2 0.425 um2 0.242 um2
8T 1.354 um2 0.953 um2 0.477 um2

eFlash

Platform offering CU250F C55LP C40LP
Technology node 55㎚ 55㎚ 40㎚
Core Vcc (V) 1.2 1.2 1.1
FLOTOX V - -
Plug-In - V V

Mixed Signal Devices

Platform offering CU250F C55LP C40LP
Technology node 55㎚ 55㎚ 40㎚
Core Vcc (V) 1.2 1.2 1.1
Native Vt - V V
Bipolar V V V
Diodes V V V
5V LDMOS - V V
NCAP V V V
PCAP V V -
MOMCAP V V V
MIMCAP - V -
Resisters V V V
Inductors - V V