Wireless communication is a key concept in the rapidly progressing IoT society.
Our ULP/LP technology comes with PDK and the devices necessary for RF design (such as varactors, inductors, and MOM/MIM capacitors), enabling us to provide the optimal RF solutions to customers.

Device Detail CS100A_LL CS200L CS250L C55LP C40LP
Technology node 90㎚ 65㎚ 55㎚ 55㎚ 40㎚
Transistor Core SVT, LVT/uLVT 〇 / - 〇 / - 〇 / - 〇 / 〇 〇 / 〇
2.5V SVT (1.8V UD/3.3V 0D) - - -
2.5V LVT - - - -
1.8V / 3.3V - / 〇 〇 / 〇 〇 / 〇 - -
5.0V LDMOS - - -
Capacitor MIM -
MOM
Varactor
Inductor Ultra Thick Metal for High-Q Inductor
Symmetric, Asymmetric,
center-tapped type
Diode ESD Diode -

USJC offers 55㎚ millimeter wave solutions that are also used in 5G, automotive radar, etc.

C55LP Millimeter-wave-compatible element

Device Detail
Transistor 1.2V uLVT
2.5V (0D33, UD18)
Coplanar TL (Z0 = 50 ohm) Straight, Bend, T-junction
Open/Short stub
Straight (M1-M4 vacant)
Microstrip TL (Z0 = 50 ohm) Straight
Decap Cell MIM + MOM
Capacitor MIM
MOM
1.2V Varactor (Differential)
Inductor Fixed Model
Transformer Fixed Model
Resistor Silicide Poly (n/p-type)
Non-silicide Poly (n/p-type)
Diode Schottky Barrier Diode
ESD Diode