Wireless communication is a key concept in the rapidly progressing IoT society.
Our ULP/LP technology comes with PDK and the devices necessary for RF design (such as varactors, inductors, and MOM/MIM capacitors), enabling us to provide the optimal RF solutions to customers.
Device | Detail | CS100A_LL | CS200L | CS250L | C55LP | C40LP |
---|---|---|---|---|---|---|
Technology node | 90㎚ | 65㎚ | 55㎚ | 55㎚ | 40㎚ | |
Transistor | Core SVT, LVT/uLVT | 〇 / - | 〇 / - | 〇 / - | 〇 / 〇 | 〇 / 〇 |
2.5V SVT (1.8V UD/3.3V 0D) | - | - | - | 〇 | 〇 | |
2.5V LVT | 〇 | - | - | - | - | |
1.8V / 3.3V | - / 〇 | 〇 / 〇 | 〇 / 〇 | - | - | |
5.0V LDMOS | - | - | - | 〇 | 〇 | |
Capacitor | MIM | 〇 | 〇 | 〇 | 〇 | - |
MOM | 〇 | 〇 | 〇 | 〇 | 〇 | |
Varactor | 〇 | 〇 | 〇 | 〇 | 〇 | |
Inductor | Ultra Thick Metal for High-Q Inductor | 〇 | 〇 | 〇 | 〇 | 〇 |
Symmetric, Asymmetric, center-tapped type |
〇 | 〇 | 〇 | 〇 | 〇 | |
Diode | ESD Diode | 〇 | 〇 | 〇 | 〇 | - |
USJC offers 55㎚ millimeter wave solutions that are also used in 5G, automotive radar, etc.
C55LP Millimeter-wave-compatible element
Device | Detail |
---|---|
Transistor | 1.2V uLVT |
2.5V (0D33, UD18) | |
Coplanar TL (Z0 = 50 ohm) | Straight, Bend, T-junction |
Open/Short stub | |
Straight (M1-M4 vacant) | |
Microstrip TL (Z0 = 50 ohm) | Straight |
Decap Cell | MIM + MOM |
Capacitor | MIM |
MOM | |
1.2V Varactor (Differential) | |
Inductor | Fixed Model |
Transformer | Fixed Model |
Resistor | Silicide Poly (n/p-type) |
Non-silicide Poly (n/p-type) | |
Diode | Schottky Barrier Diode |
ESD Diode |